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AO4449 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4449 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = -30V ID = -7 A (VGS = -10V) RDS(ON) < 34m (VGS = -10V) RDS(ON) < 54m (VGS = -4.5V)
SOIC-8 Top View S S S G D D D D
D
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current F Pulsed Drain Current Power Dissipation A
B
Maximum -30 20 -7 -4.6 -40 3.1 2 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 31 60 16
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4449
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-30V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-7A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-7A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1 -40 27 38 43 15 -0.77 -1 -3.5 980 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 150 115 2.2 18.7 VGS=-10V, VDS=-15V, ID=-7A 9.6 3.2 4.8 7.7 VGS=-10V, VDS=-15V, RL=2.2, RGEN=3 IF=-7A, dI/dt=100A/s 6 20 7 21 13 26 3.3 24 1225 54 34 -2 Min -30 -1 -5 100 -3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-7A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F.The current rating is based on the t 10s thermal resistance rating. Rev0: Dec 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4449
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40 35 30 25 -ID (A) 20 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 60 Normalized On-Resistance 50 RDS(ON) (m) 40 30 20 10 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 70 60 RDS(ON) (m) -IS (A) 50 40 30 20 10 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=-7A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C VGS=-10V 2.00 VGS=-4.5V 1.80 1.60 1.40 1.20 1.00 0.80 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-4.5V ID=-5A VGS=-10V ID=-7A VGS=-3V 5 0 0 1 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics 125C 25C -3.5V 20 -ID(A) -4V 15 10 -10V -6V -4.5V 30 25 VDS=-5V
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4449
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 -VGS (Volts) 6 4 2 0 0 4 8 12 16 20 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-7A 1500 1250 Ciss Capacitance (pF) 1000 750 500 250 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics
Coss
Crss
100.0 10s 10.0 ID (Amps) RDS(ON) limited DC TJ(Max)=150C TA=25C 0.1ms Power (W) 1ms 0.1s 10s
1.0
0.1
0.0 0.01
100 90 80 70 60 50 40 30 20 10 0 0.0001
TJ(Max)=150C TA=25C
0.001
0.01
0.1
1
10
100
1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
0.1
100
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 Single Pulse 0.01 0.00001
PD Ton
T
0.0001
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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